Electronic, magnetic, and thermodynamic properties of the kagome layer compound FeSn

Brian C. Sales, Jiaqiang Yan, William R. Meier, Andrew D. Christianson, Satoshi Okamoto, and Michael A. McGuire
Phys. Rev. Materials 3, 114203 – Published 25 November 2019

Abstract

Single crystals of the single kagome layer compound FeSn are investigated using x-ray and neutron scattering, magnetic susceptibility and magnetization, heat capacity, resistivity, Hall, Seebeck, thermal expansion, thermal conductivity measurements, and density functional theory (DFT). FeSn is a planar antiferromagnet below TN=365K and exhibits ferromagnetic magnetic order within each kagome layer. The in-plane magnetic susceptibility is sensitive to synthesis conditions. Resistivity, Hall and Seebeck results indicate multiple bands near the Fermi energy. The resistivity of FeSn is ≈3 times lower for current along the stacking direction than in the plane, suggesting that transport and the bulk electronic structure of FeSn is not quasi-two-dimensional (2D). FeSn is an excellent metal with ρ(300 K)/ρ(2 K) values ≈100 in both directions. While the ordered state is antiferromagnetic, high temperature susceptibility measurements indicate a ferromagnetic Curie-Weiss temperature of 173 K, reflecting the strong in-plane ferromagnetic interactions. DFT calculations show a 3D electronic structure with the Dirac nodal lines along the K-H directions in the magnetic Brillouin zone about 0.3 eV below the Fermi energy, with the Dirac dispersions at the K points gapped by spin-orbit coupling except at the H point. The magnetism, however, is highly 2D with Jinplane/Joutofplane10. The predicted spin-wave spectrum is presented.

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  • Received 17 July 2019
  • Revised 6 September 2019

DOI:https://doi.org/10.1103/PhysRevMaterials.3.114203

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Brian C. Sales, Jiaqiang Yan, William R. Meier, Andrew D. Christianson, Satoshi Okamoto, and Michael A. McGuire

  • Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

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Issue

Vol. 3, Iss. 11 — November 2019

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