Relaxation Time of a Chiral Quantum RL Circuit

J. Gabelli, G. Fève, T. Kontos, J.-M. Berroir, B. Placais, D. C. Glattli, B. Etienne, Y. Jin, and M. Büttiker
Phys. Rev. Lett. 98, 166806 – Published 20 April 2007

Abstract

We report on the GHz complex admittance of a chiral one-dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imaginary parts of the admittance. Remarkably, the phase of the admittance is transmission independent. This shows that the relaxation time of a chiral R   L circuit is resistance independent. A current and charge conserving scattering theory is presented that accounts for this observation with a relaxation time given by the electronic transit time in the circuit.

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  • Received 26 January 2007

DOI:https://doi.org/10.1103/PhysRevLett.98.166806

©2007 American Physical Society

Authors & Affiliations

J. Gabelli1, G. Fève1, T. Kontos1, J.-M. Berroir1, B. Placais1,*, D. C. Glattli1,2, B. Etienne3, Y. Jin3, and M. Büttiker4

  • 1Laboratoire Pierre Aigrain, Département de Physique de l’Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
  • 2Service de Physique de l’Etat Condensé, CEA Saclay, F-91191 Gif-sur-Yvette, France
  • 3Laboratoire de Photonique et Nanostructures, CNRS, route de Nozay, F-91460 Marcoussis, France
  • 4Université de Genève, 24 Quai Ernest Ansermet, CH-1211 Genève, Switzerland

  • *Electronic address: Bernard.Placais@lpa.ens.fr

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Issue

Vol. 98, Iss. 16 — 20 April 2007

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