Tunable Anomalous Hall Effect in a Nonferromagnetic System

John Cumings, L. S. Moore, H. T. Chou, K. C. Ku, G. Xiang, S. A. Crooker, N. Samarth, and D. Goldhaber-Gordon

Phys. Rev. Lett. 96, 196404 – Published 17 May 2006

Abstract

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov–de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.

Received 30 December 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.196404

Authors & Affiliations

John Cumings^1,2, L. S. Moore¹, H. T. Chou³, K. C. Ku⁴, G. Xiang⁴, S. A. Crooker⁵, N. Samarth⁴, and D. Goldhaber-Gordon^1,*

¹Department of Physics, Stanford University, Stanford, California 94305, USA
²Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
³Department of Applied Physics, Stanford University, Stanford, California 94305, USA
⁴Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
⁵National High Magnetic Field Laboratory, Los Alamos, New Mexico 87545, USA

^*Corresponding author. Electronic address: goldhaber-gordon@stanford.edu

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Issue

Vol. 96, Iss. 19 — 19 May 2006

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