Atomic and Electronic Structure of Mixed and Partial Dislocations in GaN

Ilke Arslan, Andrew Bleloch, Eric A. Stach, and Nigel D. Browning

Phys. Rev. Lett. 94, 025504 – Published 20 January 2005

Abstract

Here we present a detailed study of mixed dislocations in GaN, in which the complexities of the atomic arrangement in the cores have been imaged directly for the first time using an aberration corrected scanning transmission electron microscope. In addition to being present as a full-core structure, the mixed dislocation is observed to dissociate into partial dislocations separated by a stacking fault only a few unit cells in length. The generation of this stacking fault appears to be impurity driven and its presence is consistent with theoretical predictions for dislocation dissociation in materials with hexagonal crystal symmetry.

Received 20 July 2004

DOI:https://doi.org/10.1103/PhysRevLett.94.025504

Authors & Affiliations

Ilke Arslan¹, Andrew Bleloch², Eric A. Stach^3,4, and Nigel D. Browning^3,5

¹Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
²UK SuperSTEM, Daresbury Laboratory, Daresbury, Cheshire WA4 4AD, United Kingdom
³National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, USA
⁴School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 USA
⁵Department of Chemical Engineering and Materials Science, University of California–Davis, Davis, California 95616, USA

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Issue

Vol. 94, Iss. 2 — 21 January 2005

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