Coherently Photoinduced Ferromagnetism in Diluted Magnetic Semiconductors

J. Fernández-Rossier, C. Piermarocchi, P. Chen, A. H. MacDonald, and L. J. Sham
Phys. Rev. Lett. 93, 127201 – Published 14 September 2004

Abstract

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation . The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature TC depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1K.

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  • Received 19 December 2003

DOI:https://doi.org/10.1103/PhysRevLett.93.127201

©2004 American Physical Society

Authors & Affiliations

J. Fernández-Rossier1,2, C. Piermarocchi3,4, P. Chen3,5, A. H. MacDonald1, and L. J. Sham3

  • 1Department of Physics, University of Texas at Austin, University Station C1600, Austin, Texas 78712 USA
  • 2Departamento de Física Aplicada, Universidad de Alicante, San Vicente del Raspeig 03690, Alicante, Spain
  • 3Department of Physics, University of California San Diego, 9500 Gilman Drive, La Jolla, California 92093 USA
  • 4Department of Physics and Astronomy, Michigan State University, 4263 Biomedical and Physical Sciences East Lansing, Michigan 48824-2320 USA
  • 5Department of Chemistry, University of California Berkeley, 406 Latimer Hall, Berkeley, California 94720-1460 USA

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Issue

Vol. 93, Iss. 12 — 17 September 2004

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