Abstract
Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation . The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1K.
- Received 19 December 2003
DOI:https://doi.org/10.1103/PhysRevLett.93.127201
©2004 American Physical Society