Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography

M. A. Gribelyuk; M. R. McCartney; Jing Li; C. S. Murthy; P. Ronsheim; B. Doris; J. S. McMurray; S. Hegde; David J. Smith

doi:10.1103/PhysRevLett.89.025502

Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography

M. A. Gribelyuk, M. R. McCartney, Jing Li, C. S. Murthy, P. Ronsheim, B. Doris, J. S. McMurray, S. Hegde, and David J. Smith

Phys. Rev. Lett. 89, 025502 – Published 19 June 2002

Abstract

Quantitative two-dimensional maps of electrostatic potential in device structures are obtained using off-axis electron holography with a spatial resolution of 6 nm and a sensitivity of 0.17 V. Estimates of junction depth and variation in electrostatic potential obtained by electron holography, process simulation, and secondary ion mass spectroscopy show close agreement. Measurement artifacts due to sample charging and surface “dead layers” do not need to be considered provided that proper care is taken with sample preparation. The results demonstrate that electron holography could become an effective method for quantitative 2D analysis of dopant diffusion in deep-submicron devices.

Received 31 October 2001

DOI:https://doi.org/10.1103/PhysRevLett.89.025502

Authors & Affiliations

M. A. Gribelyuk¹, M. R. McCartney², Jing Li³, C. S. Murthy¹, P. Ronsheim¹, B. Doris¹, J. S. McMurray¹, S. Hegde^4,5, and David J. Smith^2,3

¹IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York 12533
²Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
³Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
⁴IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
⁵DRAM Development Alliance IBM/Infineon, Semiconductor Research and Development Center, Hopewell Junction, New York 12533