Single-mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavity

G. S. Solomon; M. Pelton; Y. Yamamoto

doi:10.1103/PhysRevLett.86.3903

Single-mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavity

G. S. Solomon, M. Pelton, and Y. Yamamoto

Phys. Rev. Lett. 86, 3903 – Published 23 April 2001

Abstract

The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of $78 %$ .

Received 25 October 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3903

Authors & Affiliations

G. S. Solomon^1,2, M. Pelton¹, and Y. Yamamoto^1,3

¹Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085
²Solid State Photonics Laboratory, Stanford University, Stanford, California 94305-4085
³NTT Basic Research Laboratories, 3-1 Morinosoto-Wakamiya, Atsugi, Karagawa, 243-01, Japan