Magnetoresistance of Ferromagnetic Tunnel Junctions in the Double-Exchange Model

H. Itoh, T. Ohsawa, and J. Inoue
Phys. Rev. Lett. 84, 2501 – Published 13 March 2000
PDFExport Citation

Abstract

We conduct a theoretical study of the temperature dependence of the spin polarization ( P) and the magnetoresistance (MR) ratio using the double exchange (DE) model for ferromagnetic tunnel junctions with half-metallic systems. It is shown that the strong exchange coupling in the DE model plays an important role in the temperature dependence of both P and the MR ratio; their values can be less than the maximum values expected for half-metallic systems at low temperatures, and the MR ratio decreases more rapidly than P with increasing temperature. The calculated results, however, indicate that the MR ratio may still be large at high temperatures near the Curie temperature.

  • Received 27 July 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.2501

©2000 American Physical Society

Authors & Affiliations

H. Itoh1, T. Ohsawa2, and J. Inoue2

  • 1Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
  • 2Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan

References (Subscription Required)

Click to Expand
Issue

Vol. 84, Iss. 11 — 13 March 2000

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×