The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex

J. P. Goss, R. Jones, S. J. Breuer, P. R. Briddon, and S. Öberg
Phys. Rev. Lett. 77, 3041 – Published 30 September 1996
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Abstract

Ab initio cluster methods are used to investigate vacancy-impurity complexes in diamond. We assign the 1.682 eV, twelve-line optical band to a vacancy-Si complex which has a very unusual, possibly unique structure with a Si atom at the center of a split vacancy. The method also successfully accounts for the 1.945, 2.156, and 2.985 eV optical transitions in trigonal vacancy-N defects and estimates of radiative lifetimes are given.

  • Received 2 April 1996

DOI:https://doi.org/10.1103/PhysRevLett.77.3041

©1996 American Physical Society

Authors & Affiliations

J. P. Goss, R. Jones, and S. J. Breuer

  • Department of Physics, University of Exeter, Stocker Road, Exeter, Devon, EX4 4QL, United Kingdom

P. R. Briddon

  • Department of Physics, University of Newcastle upon Tyne, Newcastle upon Tyne, NE1 7RU, United Kingdom

S. Öberg

  • Department of Mathematics, University of Luleå, Luleå, S95187, Sweden

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Vol. 77, Iss. 14 — 30 September 1996

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