Absorption and emission of light in nanoscale silicon structures

Mark S. Hybertsen
Phys. Rev. Lett. 72, 1514 – Published 7 March 1994
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Abstract

A unified model of phonon-assisted and zero-phonon radiative transitions in nanoscale silicon structures is presented. For characteristic sizes above 15–20 Å, phonon-assisted transitions dominate, while zero-phonon transitions, allowed due to the finite-size effect, are more important for smaller length scales. Light emission from porous silicon is analyzed on the basis of these results showing that phonon-assisted transitions should dominate the emission in the observed red band.

  • Received 21 October 1993

DOI:https://doi.org/10.1103/PhysRevLett.72.1514

©1994 American Physical Society

Authors & Affiliations

Mark S. Hybertsen

  • AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974

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Vol. 72, Iss. 10 — 7 March 1994

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