Observation of pair currents in superconductor-semiconductor contacts

A. Kastalsky, A. W. Kleinsasser, L. H. Greene, R. Bhat, F. P. Milliken, and J. P. Harbison
Phys. Rev. Lett. 67, 3026 – Published 18 November 1991
PDFExport Citation

Abstract

An excess low-voltage conductance is observed in Nb-InGaAs contacts at low temperatures and interpreted as being due to a pair current across the superconductor-semiconductor interface. This is the first observation of a pair current, a nonequilibrium manifestation of the proximity effect, in junctions having one electrode which is not a superconductor. A model is presented which accounts for the observed behavior. In addition to the pair current, it is demonstrated that these junctions exhibit excess conductance due to Andreev scattering.

  • Received 12 August 1991

DOI:https://doi.org/10.1103/PhysRevLett.67.3026

©1991 American Physical Society

Authors & Affiliations

A. Kastalsky, A. W. Kleinsasser, L. H. Greene, R. Bhat, F. P. Milliken, and J. P. Harbison

  • Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701
  • IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598

References (Subscription Required)

Click to Expand
Issue

Vol. 67, Iss. 21 — 18 November 1991

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×