Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus
Phys. Rev. Lett. 53, 2173 – Published 26 November 1984
PDFExport Citation

Abstract

We present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved even for shifts much larger than the zero-field binding energy and fields > 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers.

  • Received 27 April 1984

DOI:https://doi.org/10.1103/PhysRevLett.53.2173

©1984 American Physical Society

Authors & Affiliations

D. A. B. Miller, D. S. Chemla, and T. C. Damen

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

A. C. Gossard and W. Wiegmann

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

T. H. Wood and C. A. Burrus

  • AT&T Bell Laboratories, Crawford Hill, New Jersey 07733

References (Subscription Required)

Click to Expand
Issue

Vol. 53, Iss. 22 — 26 November 1984

Reuse & Permissions
Access Options

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×