Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon

K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, and G. D. Watkins
Phys. Rev. Lett. 48, 37 – Published 4 January 1982
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Abstract

Optical detection of magnetic resonance is reported for the 0.97-eV luminescence in neutron-irradiated silicon. The resonance is of an excited triplet (S=1) state of the defect, which is not the radiative state, known to be a singlet (S=0). The spectrum is unusual in that it is characteristic of a statically distorted defect (from C3v to C1h), but with residual dynamic tunneling effects where random strain stabilizes mixtures of the static C1h distortions. Vacancy-related models previously suggested for the defect are tentatively ruled out.

  • Received 9 November 1981

DOI:https://doi.org/10.1103/PhysRevLett.48.37

©1982 American Physical Society

Authors & Affiliations

K. M. Lee, K. P. O'Donnell, J. Weber*, B. C. Cavenett, and G. D. Watkins

  • Department of Physics, Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015

  • *Permanent address: Physikalisches Institut (Teil 4) der Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, Federal Republic of Germany.
  • Permanent address: Department of Physics, The University, Hull, England.

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Vol. 48, Iss. 1 — 4 January 1982

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