EPR Observation of the Isolated Interstitial Carbon Atom in Silicon

G. D. Watkins and K. L. Brower
Phys. Rev. Lett. 36, 1329 – Published 31 May 1976
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Abstract

An EPR spectrum, labeled Si-G12, is identified as arising from an isolated interstitial carbon atom in silicon. A 100 C-Si interstitialcy model is suggested for the defect in which a silicon and carbon atom pair partially share single substitutional site. Because carbon is isoelectronic with silicon, these results suggest a similar 100 Si-Si interstitialcy configuration for the silicon self-interstitial, a fundamental defect which has so far eluded direct detection.

  • Received 12 April 1976

DOI:https://doi.org/10.1103/PhysRevLett.36.1329

©1976 American Physical Society

Authors & Affiliations

G. D. Watkins

  • Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015

K. L. Brower

  • Sandia Laboratories, Albuquerque, New Mexico 87115

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Issue

Vol. 36, Iss. 22 — 31 May 1976

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