Optical Absorption and Vacuum-Ultraviolet Reflectance of GaN Thin Films

B. B. Kosicki, R. J. Powell, and J. C. Burgiel
Phys. Rev. Lett. 24, 1421 – Published 22 June 1970
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Abstract

Optical absorption of GaN thin films shows previously unreported structure at 3.8 eV, which is interpreted as the excitonic "knee" due to transitions across the fundamental direct energy gap previously thought to occur at an energy of about 3.4 eV. We also give the first report of the specular reflectance of GaN; peaks were observed at 6.8, 9.5, and 10.7 eV.

  • Received 17 April 1970

DOI:https://doi.org/10.1103/PhysRevLett.24.1421

©1970 American Physical Society

Authors & Affiliations

B. B. Kosicki, R. J. Powell, and J. C. Burgiel

  • Bell Telephone Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 24, Iss. 25 — 22 June 1970

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