Circular Dichroism and Superdiffusive Transport at the Surface of BiTeI

J. Mauchain, Y. Ohtsubo, M. Hajlaoui, E. Papalazarou, M. Marsi, A. Taleb-Ibrahimi, J. Faure, K. A. Kokh, O. E. Tereshchenko, S. V. Eremeev, E. V. Chulkov, and L. Perfetti

Phys. Rev. Lett. 111, 126603 – Published 19 September 2013; Erratum Phys. Rev. Lett. 112, 029901 (2014)

Abstract

We investigate the electronic states of BiTeI after the optical pumping with circularly polarized photons. Our data show that photoexcited electrons reach an internal thermalization within 300 fs of the arrival of the pump pulse. Instead, the dichroic contrast generated by the circularly polarized light relaxes on a time scale shorter than 80 fs. This result implies that orbital and spin polarization created by the circular pump pulse rapidly decays via manybody interaction. The persistent dichroism at longer delay times is due to the helicity dependence of superdiffussive transport. We ascribe it to the lack of inversion symmetry in an electronic system far from equilibrium conditions.

Received 21 May 2013

DOI:https://doi.org/10.1103/PhysRevLett.111.126603

Erratum

Erratum: Circular Dichroism and Superdiffusive Transport at the Surface of BiTeI [Phys. Rev. Lett. 111, 126603 (2013)]

J. Mauchain, Y. Ohtsubo, M. Hajlaoui, E. Papalazarou, M. Marsi, A. Taleb-Ibrahimi, J. Faure, K. A. Kokh, O. E. Tereshchenko, S. V. Eremeev, E. V. Chulkov, and L. Perfetti

Phys. Rev. Lett. 112, 029901 (2014)

Authors & Affiliations

J. Mauchain¹, Y. Ohtsubo², M. Hajlaoui¹, E. Papalazarou¹, M. Marsi¹, A. Taleb-Ibrahimi², J. Faure³, K. A. Kokh⁴, O. E. Tereshchenko⁵, S. V. Eremeev^6,7, E. V. Chulkov^6,8, and L. Perfetti⁹

¹Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, FR-91405 Orsay, France
²Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin-BP 48, F-91192 Gif sur Yvette, France
³Laboratoire d’Optique Appliquée, Ecole polytechnique, 91128 Palaiseau cedex, France
⁴Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Koptyuga pr. 3, Novosibirsk 630090 Russian Federation
⁵Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, and Novosibirsk State University, Novosibirsk, 630090 Russian Federation
⁶Tomsk State University, 634050 Tomsk, Russian Federation
⁷Institute of Strength Physics and Materials Science SB RAN, 634021 Tomsk, Russian Federation
⁸Donostia International Physics Center (DIPC), CFM-MPC, Centro Mixto CSIC-UPV/EHU, and Departamento de Física de Materiales, UPV/EHU, 20018 San Sebastián, Spain
⁹Laboratoire des Solides Irradiés, Ecole polytechnique, 91128 Palaiseau cedex, France

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Vol. 111, Iss. 12 — 20 September 2013

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