• Open Access

Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity

D. A. MacLellan, D. C. Carroll, R. J. Gray, N. Booth, M. Burza, M. P. Desjarlais, F. Du, B. Gonzalez-Izquierdo, D. Neely, H. W. Powell, A. P. L. Robinson, D. R. Rusby, G. G. Scott, X. H. Yuan, C.-G. Wahlström, and P. McKenna
Phys. Rev. Lett. 111, 095001 – Published 28 August 2013

Abstract

Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 3 April 2013

DOI:https://doi.org/10.1103/PhysRevLett.111.095001

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

© 2013 American Physical Society

Authors & Affiliations

D. A. MacLellan1, D. C. Carroll1, R. J. Gray1, N. Booth2, M. Burza3, M. P. Desjarlais4, F. Du5, B. Gonzalez-Izquierdo1, D. Neely2, H. W. Powell1, A. P. L. Robinson2, D. R. Rusby1,2, G. G. Scott1,2, X. H. Yuan6, C.-G. Wahlström3, and P. McKenna1,*

  • 1Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
  • 2Central Laser Facility, STFC Rutherford Appleton Laboratory, Oxfordshire OX11 0QX, United Kingdom
  • 3Department of Physics, Lund University, Post Office Box 118, S-22100 Lund, Sweden
  • 4Sandia National Laboratories, Post Office Box 5800, Albuquerque, New Mexico 87185, USA
  • 5Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 6Department of Physics and Key Laboratory for Laser Plasmas (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240, China

  • *paul.mckenna@strath.ac.uk

Article Text

Click to Expand

References

Click to Expand
Issue

Vol. 111, Iss. 9 — 30 August 2013

Reuse & Permissions
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 3.0 License. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

×

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×