Conductance Fluctuations and Field Asymmetry of Rectification in Graphene

C. Ojeda-Aristizabal, M. Monteverde, R. Weil, M. Ferrier, S. Guéron, and H. Bouchiat
Phys. Rev. Lett. 104, 186802 – Published 3 May 2010

Abstract

We investigate conductance fluctuations as a function of carrier density n and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations’ correlation energy and field, which are functions of the diffusion coefficient, have fundamentally different variations with n, illustrating the contrast between massive and massless carriers. The field dependent fluctuations are nearly independent of n, but the n-dependent fluctuations are not universal and are largest at the charge neutrality point. We also measure the second-order conductance fluctuations (mesoscopic rectification). Its field asymmetry, due to electron-electron interaction, decays with conductance, as predicted for diffusive systems.

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  • Received 24 September 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.186802

©2010 American Physical Society

Authors & Affiliations

C. Ojeda-Aristizabal, M. Monteverde, R. Weil, M. Ferrier, S. Guéron, and H. Bouchiat

  • Laboratoire de Physique des Solides, Univ. Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex, France

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Vol. 104, Iss. 18 — 7 May 2010

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