Why Multilayer Graphene on 4HSiC(0001¯) Behaves Like a Single Sheet of Graphene

J. Hass, F. Varchon, J. E. Millán-Otoya, M. Sprinkle, N. Sharma, W. A. de Heer, C. Berger, P. N. First, L. Magaud, and E. H. Conrad
Phys. Rev. Lett. 100, 125504 – Published 28 March 2008

Abstract

We show experimentally that multilayer graphene grown on the carbon terminated SiC(0001¯) surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface. Via first-principles calculation, we demonstrate that such faults produce an electronic structure indistinguishable from an isolated single graphene sheet in the vicinity of the Dirac point. This explains prior experimental results that showed single-layer electronic properties, even for epitaxial graphene films tens of layers thick.

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  • Received 13 June 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.125504

©2008 American Physical Society

Authors & Affiliations

J. Hass1, F. Varchon2, J. E. Millán-Otoya1, M. Sprinkle1, N. Sharma1, W. A. de Heer1, C. Berger1,2, P. N. First1, L. Magaud2, and E. H. Conrad1

  • 1The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA
  • 2Institut Néel/CNRS-UJF BP166, 38042 Grenoble Cedex 9, France

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Vol. 100, Iss. 12 — 28 March 2008

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