Excitation curves and angular distributions for the reaction ${}_{}{}^{28}{}_{}{}^{}\mathrm{Si}(d, p){}_{}{}^{29}{}_{}{}^{}\mathrm{Si}$ have been measured over the range of bombarding energy from 2.0 to 4.2 MeV. The proton groups leading to the five lowest states of ${}_{}{}^{29}{}_{}{}^{}\mathrm{Si}$ were measured. The results are analyzed by the methods of fluctuation theory and of average angular distribution using the Hauser-Feshbach formula and the distorted-wave Born-approximation theory. Ratios of the direct reaction to the compound nucleus cross section obtained from the two methods are compared. The average total level width $〈\Gamma 〉=29\mathrm{}$ keV, the average level space of spinless $D_0=1.38\mathrm{}$ keV, spin cutoff parameter ${\sigma }^2=2.5\mathrm{}$, nuclear temperature $t=1.8\mathrm{}$ MeV, and moment of inertia $\mathcal{I}=0.6\mathrm{}\times {10}^{-42\mathrm{}}$ MeV ${\sec }^2$ of ${}_{}{}^{30}{}_{}{}^{}\mathrm{P}$ around 14.78-MeV excitation energy are obtained.

• Received 31 July 1972

DOI:https://doi.org/10.1103/PhysRevC.7.1425