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Quantum dot state initialization by control of tunneling rates

Tobias Wenz, Jevgeny Klochan, Frank Hohls, Thomas Gerster, Vyacheslavs Kashcheyevs, and Hans W. Schumacher
Phys. Rev. B 99, 201409(R) – Published 20 May 2019
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Abstract

We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital relaxation leads to fast transition into the ground state, for electron pairs triplet-to-singlet relaxation is suppressed by long spin-flip times. This enables the fast gate-controlled initialization of either a singlet or a triplet electron pair state in a quantum dot with broad potential applications in quantum technologies.

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  • Received 6 March 2019

DOI:https://doi.org/10.1103/PhysRevB.99.201409

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Tobias Wenz1, Jevgeny Klochan2, Frank Hohls1,*, Thomas Gerster1, Vyacheslavs Kashcheyevs2,†, and Hans W. Schumacher1

  • 1Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig, Germany
  • 2Department of Physics, University of Latvia, Jelgavas Street 3, LV 1004 Riga, Latvia

  • *frank.hohls@ptb.de
  • slava@latnet.lv

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Issue

Vol. 99, Iss. 20 — 15 May 2019

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