Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

Jiawei Yan, Shizhuo Wang, Ke Xia, and Youqi Ke
Phys. Rev. B 97, 014404 – Published 3 January 2018

Abstract

We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.

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  • Received 30 September 2017

DOI:https://doi.org/10.1103/PhysRevB.97.014404

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jiawei Yan1,2,3, Shizhuo Wang4, Ke Xia5, and Youqi Ke1,2,3,*

  • 1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 3University of Chinese Academy of Sciences, Beijing 100049, China
  • 4College of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China
  • 5Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, China

  • *keyq@shanghaitech.edu.cn

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Vol. 97, Iss. 1 — 1 January 2018

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