Effect of in-plane magnetic field and applied strain in quantum spin Hall systems: Application to InAs/GaSb quantum wells

Lun-Hui Hu, Dong-Hui Xu, Fu-Chun Zhang, and Yi Zhou
Phys. Rev. B 94, 085306 – Published 12 August 2016

Abstract

Motivated by the recent discovery of quantized spin Hall effect in InAs/GaSb quantum wells [Du, Knez, Sullivan, and Du, Phys. Rev. Lett. 114, 096802 (2015)], we theoretically study the effects of in-plane magnetic field and strain effect to the quantization of charge conductance by using Landauer-Bütikker formalism. Our theory predicts a robustness of the conductance quantization against the in-plane magnetic field up to a very high field of 20 T. We use a disordered hopping term to model the strain and show that the strain may help the quantization of the conductance. Relevance to the experiments will be discussed.

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  • Received 10 April 2016
  • Revised 29 July 2016

DOI:https://doi.org/10.1103/PhysRevB.94.085306

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Lun-Hui Hu1,2, Dong-Hui Xu3, Fu-Chun Zhang1,2, and Yi Zhou1,2

  • 1Department of Physics, Zhejiang University, Hangzhou, Zhejiang, 310027, China
  • 2Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 3Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China

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Issue

Vol. 94, Iss. 8 — 15 August 2016

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