Abstract
Motivated by the recent discovery of quantized spin Hall effect in InAs/GaSb quantum wells [Du, Knez, Sullivan, and Du, Phys. Rev. Lett. 114, 096802 (2015)], we theoretically study the effects of in-plane magnetic field and strain effect to the quantization of charge conductance by using Landauer- formalism. Our theory predicts a robustness of the conductance quantization against the in-plane magnetic field up to a very high field of 20 T. We use a disordered hopping term to model the strain and show that the strain may help the quantization of the conductance. Relevance to the experiments will be discussed.
3 More- Received 10 April 2016
- Revised 29 July 2016
DOI:https://doi.org/10.1103/PhysRevB.94.085306
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