Excitons in anisotropic two-dimensional semiconducting crystals

A. S. Rodin, A. Carvalho, and A. H. Castro Neto
Phys. Rev. B 90, 075429 – Published 25 August 2014

Abstract

The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding energy in phosphorene as a function of the substrate dielectric constant.

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  • Received 3 July 2014
  • Revised 12 August 2014

DOI:https://doi.org/10.1103/PhysRevB.90.075429

©2014 American Physical Society

Authors & Affiliations

A. S. Rodin1, A. Carvalho2, and A. H. Castro Neto1,2

  • 1Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
  • 2Graphene Research Centre and Department of Physics, National University of Singapore, 117542, Singapore

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Issue

Vol. 90, Iss. 7 — 15 August 2014

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