Local strain and anharmonicity in the bonding of Bi2Se3xTex topological insulators

Keeseong Park, Yusuke Nomura, Ryotaro Arita, Anna Llobet, and Despina Louca
Phys. Rev. B 88, 224108 – Published 31 December 2013

Abstract

Using neutron diffraction and the pair density function analysis, the local atomic structure of the three-dimensional Bi2Se3xTex (x=0, 1, 2, and 3) topological insulator is investigated. The substitution of Te for Se in Bi2Se3xTex (x=0, 1, 2, and 3) is not random and its preferred site is at the edges of the quintuple layer. This generates a local strain due to the atom size mismatch between Se and Te. The site preference is surprising given that the Bi to chalcogen bonds are strongest when the ions are at the edges than in the middle layer. The (Se/Te) atoms in the middle sublayer of the quintuple are coupled more softly to the Bi atoms than those of the edges and have lower Debye temperatures. This suggests that the atomic properties within the quintuple layer are different than those at the edges. Additionally, the results from band structure and density of state calculations are reported to show the dependence of doping and temperature.

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  • Received 12 August 2013
  • Revised 5 November 2013

DOI:https://doi.org/10.1103/PhysRevB.88.224108

©2013 American Physical Society

Authors & Affiliations

Keeseong Park1,*, Yusuke Nomura2, Ryotaro Arita2, Anna Llobet3, and Despina Louca1

  • 1University of Virginia, Charlottesville, Virginia 22904, USA
  • 2Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku Tokyo 113-8656, Japan
  • 3Lujan Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

  • *New address: Basic Science College, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873, Korea.

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Vol. 88, Iss. 22 — 1 December 2013

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