Resonant exchange interaction in semiconductors

I. V. Rozhansky, I. V. Krainov, N. S. Averkiev, and E. Lähderanta
Phys. Rev. B 88, 155326 – Published 29 October 2013

Abstract

We present a nonperturbative calculation of indirect exchange interaction between two paramagnetic impurities via two-dimensional (2D) free carriers gas separated by a tunnel barrier. The method takes into account the impurity attractive potential which can form a bound state. The calculations show that if the bound impurity state energy lies within the energy range occupied by the free 2D carriers the indirect exchange interaction is strongly enhanced due to resonant tunneling and exceeds by a few orders of magnitude what one would expect from the conventional Ruderman-Kittel-Kasuya-Yosida approach.

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  • Received 4 July 2013

DOI:https://doi.org/10.1103/PhysRevB.88.155326

©2013 American Physical Society

Authors & Affiliations

I. V. Rozhansky1,2,3,*, I. V. Krainov1, N. S. Averkiev1, and E. Lähderanta2

  • 1A.F. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia
  • 2Lappeenranta University of Technology, P.O. Box 20, FI-53851, Lappeenranta, Finland
  • 3St. Petersburg State Polytechnic University, 29 Polytechnicheskaja, St. Petersburg 195251, Russia

  • *rozhansky@gmail.com

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Issue

Vol. 88, Iss. 15 — 15 October 2013

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