Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions

J. Z. Sun, S. L. Brown, W. Chen, E. A. Delenia, M. C. Gaidis, J. Harms, G. Hu, Xin Jiang, R. Kilaru, W. Kula, G. Lauer, L. Q. Liu, S. Murthy, J. Nowak, E. J. O’Sullivan, S. S. P. Parkin, R. P. Robertazzi, P. M. Rice, G. Sandhu, T. Topuria, and D. C. Worledge
Phys. Rev. B 88, 104426 – Published 26 September 2013

Abstract

It is convenient to define the spin-torque switching efficiency in nanostructured magnetic tunnel junctions as the ratio between the free-layers thermal activation barrier height Eb and the threshold switching current Ic0. Recent device exploration has led to occasional observations of spin-torque induced magnetic switching efficiency in magnetic tunnel junctions that exceeds the macrospin limit by a factor of 2–10. In this paper we examine the possible origins for such enhancement, and materials properties that may allow the full realization of such enhancements.

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  • Received 7 July 2013

DOI:https://doi.org/10.1103/PhysRevB.88.104426

©2013 American Physical Society

Authors & Affiliations

J. Z. Sun1,*, S. L. Brown1, W. Chen2, E. A. Delenia3, M. C. Gaidis1, J. Harms2, G. Hu1, Xin Jiang3, R. Kilaru1, W. Kula2, G. Lauer1, L. Q. Liu1, S. Murthy2, J. Nowak1, E. J. O’Sullivan1, S. S. P. Parkin3, R. P. Robertazzi1, P. M. Rice3, G. Sandhu2, T. Topuria3, and D. C. Worledge1

  • 1IBM-Micron MRAM Alliance, IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
  • 2IBM-Micron MRAM Alliance, Micron, Boise, Idaho 83707, USA
  • 3IBM-Micron MRAM Alliance, IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA

  • *jonsun@us.ibm.com

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Vol. 88, Iss. 10 — 1 September 2013

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