Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura, Kevin C. Y. Huang, Shruti V. Thombare, Shu Hu, Marika Gunji, Toyofumi Ishikawa, Mark L. Brongersma, Kohei M. Itoh, and Paul C. McIntyre
Phys. Rev. B 86, 035306 – Published 6 July 2012

Abstract

We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

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  • Received 15 March 2012

DOI:https://doi.org/10.1103/PhysRevB.86.035306

©2012 American Physical Society

Authors & Affiliations

Yoko Kawamura3, Kevin C. Y. Huang1, Shruti V. Thombare1, Shu Hu1, Marika Gunji1, Toyofumi Ishikawa3, Mark L. Brongersma1,2, Kohei M. Itoh3, and Paul C. McIntyre1,2,*

  • 1Materials Science and Engineering, Stanford University, Stanford, California 94305
  • 2Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305
  • 3School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

  • *Corresponding author: pcm1@stanford.edu

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Issue

Vol. 86, Iss. 3 — 15 July 2012

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