Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

S. Wiedmann, G. M. Gusev, O. E. Raichev, A. K. Bakarov, and J. C. Portal
Phys. Rev. B 81, 085311 – Published 8 February 2010

Abstract

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T4K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.

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  • Received 10 November 2009

DOI:https://doi.org/10.1103/PhysRevB.81.085311

©2010 American Physical Society

Authors & Affiliations

S. Wiedmann1,2, G. M. Gusev3, O. E. Raichev4, A. K. Bakarov5, and J. C. Portal1,2,6

  • 1LNCMI-CNRS, UPR 3228, BP 166, 38042 Grenoble Cedex 9, France
  • 2INSA Toulouse, 31077 Toulouse Cedex 4, France
  • 3Instituto de Física da Universidade de São Paulo, CP 66318 CEP 05315-970, São Paulo, SP, Brazil
  • 4Institute of Semiconductor Physics, NAS of Ukraine, Prospekt Nauki 41, 03028, Kiev, Ukraine
  • 5Institute of Semiconductor Physics, Novosibirsk 630090, Russia
  • 6Institut Universitaire de France, 75005 Paris, France

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Issue

Vol. 81, Iss. 8 — 15 February 2010

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