Size, oxidation, and strain in small Si/SiO2 nanocrystals

Roberto Guerra, Elena Degoli, and Stefano Ossicini
Phys. Rev. B 80, 155332 – Published 29 October 2009

Abstract

The structural, electronic, and optical properties of Si nanocrystals of different size and shape, passivated with hydrogens, OH groups, or embedded in a SiO2 matrix are studied. The comparison between the embedded and free, suspended nanocrystals (NCs) shows that the silica matrix produces a strain on the embedded NCs, which contributes to determine the band gap value. By including the strain on the hydroxided nanocrystals, we are able to reproduce the electronic and optical properties of the full Si/SiO2 systems. Moreover, we found that while the quantum confinement dominates in the hydrogenated nanocrystals of all sizes, the behavior of hydroxided and embedded nanocrystals strongly depends on the interface oxidation degree, in particular for diameters below 2 nm. Here, the proportion of NC atoms at the Si/SiO2 interface becomes relevant, producing surface-related states that may affect the quantum confinement appearing as inner band gap states and then drastically changing the optical response of the system.

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  • Received 29 July 2009

DOI:https://doi.org/10.1103/PhysRevB.80.155332

©2009 American Physical Society

Authors & Affiliations

Roberto Guerra

  • CNR-INFM-S3 and Dipartimento di Fisica, Università di Modena e Reggio Emilia, via Campi 213/A, I-41100 Modena, Italy

Elena Degoli and Stefano Ossicini

  • CNR-INFM-S3 and Dipartimento di Scienze e Metodi dell’Ingegneria, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia, Italy

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Vol. 80, Iss. 15 — 15 October 2009

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