Abstract
The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence-band splitting by local elastic strain. The conversion is studied here for heavy holes localized at shallow and deep acceptors in silicon quantum wells.
- Received 19 May 2009
DOI:https://doi.org/10.1103/PhysRevB.80.085314
©2009 American Physical Society
