The quadrupole interaction for ${}_{}{}^{111}{}_{}{}^{}\mathrm{Cd}$ (in the ${5/2}^{+}$ excited state) embedded in In, InBI, and ${\mathrm{In}}_2$Bi is studied using the time-differential-perturbed-angular correlation technique. The interaction frequencies ${\omega }_0=\left(\frac{3}{20}\right)e^{2}qQ{\hslash }^{-1\mathrm{}}$ found for ${}_{}{}^{111}{}_{}{}^{}\mathrm{Cd}$ at substitutional lattice sites in these metals are ${\omega }_0\left(\mathrm{In}\right)=16.8\mathrm{}\times {10}^6$ rad/sec, ${\omega }_0(\mathrm{InBi},\mathrm{In} \mathrm{site})=10.4\mathrm{}\times {10}^6$ rad/sec, ${\omega }_0({\mathrm{In}}_2\mathrm{Bi},{\mathrm{In}}_{\mathrm{I}} \mathrm{site})=9.7\mathrm{}\times {10}^6$ rad/sec, ${\omega }_0({\mathrm{In}}_2\mathrm{Bi},{\mathrm{In}}_{\mathrm{II}} \mathrm{site})=35.6\mathrm{}\times {10}^6$ rad/sec, and ${\omega }_0({\mathrm{In}}_2\mathrm{Bi},\mathrm{Bi} \mathrm{site})=29.6\mathrm{}\times {10}^6$ rad/sec. Local contributions to the field gradients are found to be present, implying that the previous evaluations of $Q\left({}_{}{}^{111}{}_{}{}^{}\mathrm{Cd}\right)$ should be attended to. For samples made by ion implantation of ${}_{}{}^{111}{}_{}{}^{}\mathrm{In}$, it is found that > 96%, ≅ 80%, and ≅ 84% of the implanted atoms are substitutional at room temperature for In, InBi, and ${\mathrm{In}}_2$Bi, respectively. The latter value includes ≅ 18% of ${}_{}{}^{111}{}_{}{}^{}\mathrm{In}$ at the Bi site while, for InBi, all the substitutional atoms are at In sites. The remaining implants are trapped in domains of radiation damage, characterized by a frequency distribution with a large average value ${\overline{\omega }}_0$ (for InBi ${\overline{\omega }}_0\approx 45\times {10}^7$ rad/sec).

• Received 30 May 1973

DOI:https://doi.org/10.1103/PhysRevB.8.5411