Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of $100\text{MW}/{\text{cm}}^2$, we observed carrier heating and impact ionization dynamics. The number of carriers produced exceeds ${10}^{16}{\text{cm}}^{-3}$, corresponding to a change in carrier density $\Delta N/N$ of 700% at 80 K. The onset of a well-defined absorption peak at 1.2 THz is an indication of changes in longitudinal optical (LO) and longitudinal acoustic (LA) phonon populations due to cooling of the hot electrons.

• Received 28 December 2008

DOI:https://doi.org/10.1103/PhysRevB.79.161201