Electronic structure and magnetism in BaMn2As2 and BaMn2Sb2

Jiming An, A. S. Sefat, D. J. Singh, and Mao-Hua Du
Phys. Rev. B 79, 075120 – Published 25 February 2009

Abstract

We study the properties of ThCr2Si2 structure BaMn2As2 and BaMn2Sb2 using density functional calculations of the electronic and magnetic properties as well as experimental measurements on single crystal samples of BaMn2As2. These materials are local moment magnets with moderate band gap antiferromagnetic semiconducting ground states. The electronic structures show substantial Mn-pnictogen hybridization, which stabilizes an intermediate spin configuration for the nominally d5 Mn. The results are discussed in the context of possible thermoelectric applications and the relationship with the corresponding iron/cobalt/nickel compounds Ba(Fe,Co,Ni)2As2.

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  • Received 14 January 2009

DOI:https://doi.org/10.1103/PhysRevB.79.075120

©2009 American Physical Society

Authors & Affiliations

Jiming An

  • Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6114, USA and Wuhan University of Technology, Wuhan 430070, China

A. S. Sefat, D. J. Singh, and Mao-Hua Du

  • Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6114, USA

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Issue

Vol. 79, Iss. 7 — 15 February 2009

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