Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

P. D. C. King, T. D. Veal, P. H. Jefferson, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C. F. McConville
Phys. Rev. B 79, 035203 – Published 15 January 2009

Abstract

In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.

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  • Received 9 December 2008

DOI:https://doi.org/10.1103/PhysRevB.79.035203

©2009 American Physical Society

Authors & Affiliations

P. D. C. King1,*, T. D. Veal1, P. H. Jefferson1, J. Zúñiga-Pérez2,†, V. Muñoz-Sanjosé2, and C. F. McConville1,‡

  • 1Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
  • 2Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valéncia, C/Dr. Moliner 50, 46100 Burjassot, Spain

  • *philip.d.c.king@physics.org
  • Present address: CNRS-CRHEA, rue Bernard Grégory, 06560 Valbonne, France.
  • c.f.mcconville@warwick.ac.uk

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Vol. 79, Iss. 3 — 15 January 2009

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