Theoretical model for the growth of semiconductor nanowires is developed, which enables one to determine the growth conditions under which the formation of nanowires is possible. General expression for the nanowire growth rate as function of its radius and the growth conditions is obtained and analyzed. The model also describes the transformation from cubic to hexagonal crystal phase of nanowires. It is shown that the observed crystal structure is controlled mainly by the growth kinetics. Structural diagrams and probabilities of cubic and hexagonal phase formation are calculated as functions of supersaturation and nanowire radius within the plausible range of material parameters. Numerical estimates for the domains of phase mixing and phase purity are presented and analyzed.

• Received 11 August 2008

DOI:https://doi.org/10.1103/PhysRevB.78.235301