Universal band gap modulation by radial deformation in semiconductor single-walled carbon nanotubes

Kazume Nishidate and Masayuki Hasegawa
Phys. Rev. B 78, 195403 – Published 4 November 2008

Abstract

We report on a universal band gap modulation by radial deformation found for semiconductor single-walled carbon nanotubes (SWNTs). The plausible radial deformation of an individual SWNT under hydrostatic pressure is predicted using the method developed in the previous work [M. Hasegawa and K. Nishidate, Phys. Rev. B 74, 115401 (2006)]. It is found by ab initio electronic-structure calculations that the band gap of zigzag SWNTs is dictated by the shape of the high-curvature edge region of a deformed cross section perpendicular to the tube axis: If we let Rmin be an averaged curvature radius in that region, the band gap at the Γ point remains almost unchanged when Rmin3.2Å, and its closure occurs at Rmin2.4Å irrespective of tube size and cross-sectional shape as a whole. It is also confirmed that the band gap closure is accompanied by the concentration, in the high-curvature region, of the lowest conduction state at the Γ point. Possible implications of these results are discussed.

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  • Received 30 July 2008

DOI:https://doi.org/10.1103/PhysRevB.78.195403

©2008 American Physical Society

Authors & Affiliations

Kazume Nishidate1 and Masayuki Hasegawa2,*

  • 1Department of Electrical and Electronic Engineering, Iwate University, Morioka 020-8551, Japan
  • 2Department of Materials Science and Engineering, Iwate University, Morioka 020-8551, Japan

  • *Corresponding author; hasegawa@iwate-u.ac.jp

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Issue

Vol. 78, Iss. 19 — 15 November 2008

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