Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures

J. Even, F. Doré, C. Cornet, and L. Pedesseau
Phys. Rev. B 77, 085305 – Published 6 February 2008

Abstract

A complete semianalytical model is proposed for the simulation of the electronic, mechanical, and piezoelectric properties of narrow-gap strained semiconductor quantum nanostructures. A transverse isotropic approximation for the strain and an axial approximation for the strained 8×8 Hamiltonian are proposed. It is applied extensively to the case of InAsInP quantum dots (QDs). Symmetry analysis shows that there does exist a nonvanishing splitting on the electron P states due to the coupling with valence band. This splitting, which was not considered before, is found to be smaller in InAsGaAs QD than in InAsInP QD. Analytic expressions for the first and second order piezoelectric polarizations are used to evaluate the perturbation of electronic states.

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  • Received 9 July 2007

DOI:https://doi.org/10.1103/PhysRevB.77.085305

©2008 American Physical Society

Authors & Affiliations

J. Even*, F. Doré, C. Cornet, and L. Pedesseau

  • FOTON-INSA Laboratory, UMR 6082 au CNRS, INSA de Rennes, 20 Avenue des Buttes de Coësmes, CS 14315, 35043 Rennes Cedex, France

  • *Corresponding author; jacky.even@insa-rennes.fr

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Issue

Vol. 77, Iss. 8 — 15 February 2008

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