Ab initio study of ΓX intervalley scattering in GaAs under pressure

Jelena Sjakste, Valeriy Tyuterev, and Nathalie Vast
Phys. Rev. B 74, 235216 – Published 26 December 2006

Abstract

State-of-the-art ab initio methods have been used to describe the evolution of the ΓX intervalley scattering deformation potential (IDP) in gallium arsenide under pressure. We show that both our IDP dispersion and its pressure dependence lead to a decrease of the scattering within the first conduction band. DΓX=4.2eVÅ is our theoretical value of the average IDP for transitions at the direct-to-indirect band gap crossover pressure. We estimate the theoretical average IDP to be 3.8eVÅ at the pressure where ΓL scattering becomes allowed. We propose a model beyond Conwell’s one that includes the pressure dependence of the IDP, which we have applied to the broadening of the excitonic line under pressure. Fitting the experimental results of Goñi et al. [Phys. Rev. B 41, 10111 (1990)] to our model, we found a satisfactory agreement between the experimental IDP and our theoretical values.

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  • Received 6 July 2006

DOI:https://doi.org/10.1103/PhysRevB.74.235216

©2006 American Physical Society

Authors & Affiliations

Jelena Sjakste, Valeriy Tyuterev*, and Nathalie Vast

  • Laboratoire des Solides Irradiés, Ecole Polytechnique, CEA-DSM, CNRS, 91128 Palaiseau, France

  • *Permanent address: Tomsk State Pedagogical University, 634041 Tomsk, Russia.
  • Electronic address: nathalie.vast@polytechnique.fr

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Issue

Vol. 74, Iss. 23 — 15 December 2006

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