Surface states of wurtzite semiconductor nanowires with identical lateral facets: A transfer-matrix approach

N. Malkova and C. Z. Ning
Phys. Rev. B 74, 155308 – Published 12 October 2006

Abstract

The focus of this paper is to investigate systematically surface states of semiconductor nanowires of wurtzite crystals with identical lateral surfaces. We first calculate the surface spectrum of a semi-infinite crystal. Then, using cyclic boundary conditions, we calculate the quantized spectrum of the surface states in nanowires. We find that the spectrum of the nanowire surfaces consists of a number of quantized levels inside the band gap. We further study absorption coefficients due to dipole transitions between the surface states in such nanowires. We demonstrate that such transitions lead to absorption above the fundamental band edge transition. Our calculations also show that the absorption coefficient induced by the transitions between the surface states depends weakly on the light polarization.

    • Received 21 April 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.155308

    ©2006 American Physical Society

    Authors & Affiliations

    N. Malkova* and C. Z. Ning

    • Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035, USA

    • *Electronic address: nmalkova@mail.arc.nasa.gov
    • Electronic address: cning@mail.arc.nasa.gov

    Article Text (Subscription Required)

    Click to Expand

    References (Subscription Required)

    Click to Expand
    Issue

    Vol. 74, Iss. 15 — 15 October 2006

    Reuse & Permissions
    Access Options
    Author publication services for translation and copyediting assistance advertisement

    Authorization Required


    ×
    ×

    Images

    ×

    Sign up to receive regular email alerts from Physical Review B

    Log In

    Cancel
    ×

    Search


    Article Lookup

    Paste a citation or DOI

    Enter a citation
    ×