Ground-state emission from a single InAsGaAs self-assembled quantum dot structure in ultrahigh magnetic fields

A. Babinski, G. Ortner, S. Raymond, M. Potemski, M. Bayer, W. Sheng, P. Hawrylak, Z. Wasilewski, S. Fafard, and A. Forchel
Phys. Rev. B 74, 075310 – Published 7 August 2006

Abstract

We report on the magnetic field dispersion of the exciton spin-splitting and diamagnetic shift in single InAsGaAs quantum dots up to B=28T. We have found substantial differences between field evolution of the emission from tall (4nm height) and flat (2nm height) dots. Strongly nonlinear spin-splitting is observed in the former case, while in the latter case the nonlinearity is much weaker. The diamagnetic shift of the ground-state emission can be explained in terms of geometric size of the dots. While it can be approximated by a quadratic field dependence in dots of large confining potential, a substantial linear contribution must be included to account for the diamagnetic shift in dots of weaker confinement.

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  • Received 10 March 2006

DOI:https://doi.org/10.1103/PhysRevB.74.075310

©2006 American Physical Society

Authors & Affiliations

A. Babinski1,2, G. Ortner3, S. Raymond4, M. Potemski1, M. Bayer3, W. Sheng4, P. Hawrylak4, Z. Wasilewski4, S. Fafard4, and A. Forchel5

  • 1Grenoble High Magnetic Field Laboratory, CNRS, BP166, 38042, Grenoble Cedex 9, France
  • 2Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warsaw, Poland
  • 3Experimentelle Physik II, Universität Dortmund, D-44221 Dortmund, Germany
  • 4Institute for Microstructural Sciences, National Research Council, Ottawa, Canada K1A 0R6
  • 5Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

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Issue

Vol. 74, Iss. 7 — 15 August 2006

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