Resonant Raman scattering spectroscopy of GaP1xNx and GaAs1xNx in the ultraviolet range

S. Yoon, J. F. Geisz, Sung-Ho Han, A. Mascarenhas, M. Rübhausen, and B. Schulz
Phys. Rev. B 71, 155208 – Published 27 April 2005

Abstract

We report resonant Raman scattering studies of GaP1xNx and GaAs1xNx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L-point conduction-band edges of GaP1xNx and GaAs1xNx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.

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  • Received 21 October 2003

DOI:https://doi.org/10.1103/PhysRevB.71.155208

©2005 American Physical Society

Authors & Affiliations

S. Yoon*, J. F. Geisz, Sung-Ho Han, and A. Mascarenhas

  • National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA

M. Rübhausen and B. Schulz

  • Institut für Angewandte Physik, Universität Hamburg, Jungiusstraße 11, D-20355 Hamburg, Germany

  • *Present address: Division of Nano Sciences and Department of Physics, Ewha Womans University, Seoul, 120-750 Korea.

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Vol. 71, Iss. 15 — 15 April 2005

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