Abstract
We report resonant Raman scattering studies of and in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the -point conduction-band edges of and are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.
- Received 21 October 2003
DOI:https://doi.org/10.1103/PhysRevB.71.155208
©2005 American Physical Society