Charge carrier mobility in regioregular poly(3-hexylthiophene) probed by transient conductivity techniques: A comparative study

Attila J. Mozer, Niyazi Serdar Sariciftci, Almantas Pivrikas, Ronald Österbacka, Gytis Juška, Lutz Brassat, and Heinz Bässler
Phys. Rev. B 71, 035214 – Published 27 January 2005

Abstract

The temperature and electric-field dependence of charge carrier mobility has been studied by a conventional time-of-flight technique in chemically purified, low dark conductivity samples of regioregular poly(3-hexylthiophene). Subsequently, the mobility of doping-induced charge carriers has been determined using the technique of charge carrier extraction by linearly increasing voltage in the same samples exposed to air. The charge carrier mobility determined by both experimental techniques correspond well to each other at temperatures above 130K, indicating that these experimental techniques are mutually consistent. The study clearly shows that the typical logμβE12, β>0 Poole–Frenkel-like electric-field dependence of the charge carrier mobility diminishes at temperatures around 250270K, and β becomes negative at higher temperatures. Such negative electric-field dependence of mobility observed by both experimental techniques is attributed to positional disorder in a random-organic dielectric and analyzed in the framework of the disorder formalism. Finally, the overall agreement indicates that the mode of charge generation has negligible effect on the temperature- and electric-field dependence of mobility except at the lowest temperatures (<110K), where transit time dispersion of the photogenerated charge carriers probed by the ToF technique is more pronounced.

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  • Received 16 June 2004

DOI:https://doi.org/10.1103/PhysRevB.71.035214

©2005 American Physical Society

Authors & Affiliations

Attila J. Mozer1,*, Niyazi Serdar Sariciftci1, Almantas Pivrikas2, Ronald Österbacka2, Gytis Juška3, Lutz Brassat4, and Heinz Bässler5

  • 1Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria
  • 2Department of Physics, Åbo Akademi University, Porthansgatan 3, FIN-20500 Turku, Finland
  • 3Department of Solid State Electronics, Vilnius University, Saulètekio 9, LT-01513, Vilnius, Lithuania
  • 4H. C. Starck GmbH, Research and Development, Building B 202, D-51368 Leverkusen, Germany
  • 5Institut fur Physikalische-, Kern- und Makromolekulare Chemie, Philipps-Universitat Marburg, Hans-Meerwein-Strasse, D-35032 Marburg, Germany

  • *Email address: attila.mozer@jku.at

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Issue

Vol. 71, Iss. 3 — 15 January 2005

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