Multiphonon Raman Spectrum of Silicon

Paul A. Temple and C. E. Hathaway
Phys. Rev. B 7, 3685 – Published 15 April 1973
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Abstract

The energy and polarization characteristics of the one- and two-phonon Raman spectrum have been measured using a 180° backscattering technique. The two-phonon spectrum was measured at 20, 80, and 305°K. The one-phonon spectrum was measured at 17, 30, 80, and 305 °K. The one-phonon line of symmetry Γ25, was shown to be Lorentzian and to have a deconvoluted half-width at 17 °K of 1.45 ± 0.05 cm1. The two-phonon Raman spectrum was used to determine phonon energies at the four critical points Γ, X, L, and W.

  • Received 20 December 1971

DOI:https://doi.org/10.1103/PhysRevB.7.3685

©1973 American Physical Society

Authors & Affiliations

Paul A. Temple* and C. E. Hathaway

  • Department of Physics, Kansas State University, Manhattan, Kansas 66502

  • *Present Address: Northwest Missouri State University, Maryville, Missouri 64468.

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Issue

Vol. 7, Iss. 8 — 15 April 1973

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