Impact-energy dependence of atomic mobility in diamondlike carbon film growth

Q. Wei, Z. Y. Pan, Z. J. Li, Z. X. Zhang, L. K. Zang, Y. X. Wang, X. S. Ye, T. Bai, C. Wang, and J. R. Liu
Phys. Rev. B 68, 235408 – Published 11 December 2003
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Abstract

In this paper, the deposition of energetic C2 clusters on silicon and diamond surfaces is investigated by molecular dynamics simulation. The impact energy ranges from 0.5 to 60 eV in order to compare with experiments of diamondlike carbon (DLC) film synthesis by femtosecond (fs) pulsed laser deposition. The influence of the impact energy on the deposition dynamics as well as the structure of the synthesized films is addressed. Simulations show that at the earlier stage of the deposition, the mobility of surface atoms, especially the recoil atoms, is enhanced at elevated incident energies, and contributes to the smooth growth of DLC films. Our results are consistent with experimental observations.

  • Received 9 June 2003

DOI:https://doi.org/10.1103/PhysRevB.68.235408

©2003 American Physical Society

Authors & Affiliations

Q. Wei1, Z. Y. Pan1,2,*, Z. J. Li1, Z. X. Zhang1, L. K. Zang1, Y. X. Wang1, X. S. Ye3, T. Bai3, C. Wang3, and J. R. Liu3

  • 1Institute of Modern Physics, Fudan University, Shanghai 200433, China
  • 2State Key Laboratory for Advanced Photonic Materials and Devices, Shanghai 200433, China
  • 3North-West Institute of Nuclear Technology, Xian 710024, China

  • *Corresponding author. Mailing address: Institute of Modern Physics, Fudan University, Shanghai 200433, People’s Republic of China. Email address: zypan@fudan.ac.cn; panzy@fudan.edu.cn

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Vol. 68, Iss. 23 — 15 December 2003

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