Effect of defect-induced internal field on the aging of relaxors

Zhongqing Wu, Wenhui Duan, Yu Wang, Bing-Lin Gu, and Xiao-Wen Zhang
Phys. Rev. B 67, 052101 – Published 27 February 2003
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Abstract

The effect of a defect-induced internal field on the dielectric response of relaxor ferroelectrics is investigated using a Monte Carlo simulation. It was observed that only at a small temperature range near the temperature of the dielectric maximum does the susceptibility decrease markedly due to the internal field. This temperature range increases with enhancing internal field. We found that the susceptibility is almost independent of the internal field width at low internal field width, and then decreases linearly with enhancing internal field width. This dependence of the susceptibility on the internal field width is very similar to the relation of the dielectric constant with logarithmic aging time, which probably suggests a linear dependence of the internal field on the logarithm of the aging time. The frequency dependence of the susceptibility aging is sensitive to the temperature. With increasing temperature, the curve of the susceptibility change against logarithmic frequency varies from concave to approximately linear, and then to convex, which is in agreement with the recent aging rate measurement.

  • Received 21 May 2002

DOI:https://doi.org/10.1103/PhysRevB.67.052101

©2003 American Physical Society

Authors & Affiliations

Zhongqing Wu and Wenhui Duan

  • Department of Physics, Tsinghua University, Beijing 100084, People’s Republic of China

Yu Wang

  • Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, People’s Republic of China

Bing-Lin Gu

  • Department of Physics, and Center for Advanced Study, Tsinghua University, Beijing 100084, People’s Republic of China

Xiao-Wen Zhang

  • State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People’s Republic of China

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Issue

Vol. 67, Iss. 5 — 1 February 2003

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