Saturated ferromagnetism and magnetization deficit in optimally annealed Ga1xMnxAs epilayers

S. J. Potashnik, K. C. Ku, R. Mahendiran, S. H. Chun, R. F. Wang, N. Samarth, and P. Schiffer
Phys. Rev. B 66, 012408 – Published 3 July 2002
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Abstract

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1xMnxAs epilayers for 1.35%<~x<~8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn concentration up to x0.05, but are almost constant for larger x, with Tc110K. The ferromagnetic moment per Mn ion decreases monotonically with increasing x, implying that an increasing fraction of the Mn spins do not participate in the ferromagnetism. By contrast, the derived domain wall thickness, an important parameter for device design, remains surprisingly constant.

  • Received 12 April 2002

DOI:https://doi.org/10.1103/PhysRevB.66.012408

©2002 American Physical Society

Authors & Affiliations

S. J. Potashnik, K. C. Ku, R. Mahendiran, S. H. Chun, R. F. Wang, N. Samarth, and P. Schiffer*

  • Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802

  • *Email address: schiffer@phys.psu.edu

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Vol. 66, Iss. 1 — 1 July 2002

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