Electrical transport and carrier density collapse in doped manganite thin films

L. M. Wang, H. C. Yang, and H. E. Horng
Phys. Rev. B 64, 224423 – Published 21 November 2001
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Abstract

Based on the current-carrier-density-collapse theory, an expression is proposed for resistivity as a function of temperature and magnetic field. Our low-temperature resistivity data on high-quality epitaxial thin films of doped Mn oxides can be well fitted by the derived equation. At temperatures above Tc, the zero-field resistivity data can be also well explained by the carrier-density-collapse model. Moreover, the features of electrical transport in doped Mn oxides such as a dominant T2 dependence of low-temperature resistivity, and a strong H2 dependence of magnetoresistance at temperatures above Tc are successfully interpreted in accordance with our deduction. We provide strong evidence to support that the carrier-density collapse can well describe the electrical transport in doped manganites.

  • Received 30 July 2001

DOI:https://doi.org/10.1103/PhysRevB.64.224423

©2001 American Physical Society

Authors & Affiliations

L. M. Wang1, H. C. Yang2, and H. E. Horng3

  • 1Department of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan
  • 2Department of Physics, National Taiwan University, Taipei 106, Taiwan
  • 3Department of Physics, National Taiwan Normal University, Taipei 117, Taiwan

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Issue

Vol. 64, Iss. 22 — 1 December 2001

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