Light-induced metallization at the gallium-silica interface

P. Petropoulos, H. S. Kim, D. J. Richardson, V. A. Fedotov, and N. I. Zheludev
Phys. Rev. B 64, 193312 – Published 29 October 2001
PDFExport Citation

Abstract

Simultaneous measurements of the intensity and phase of a probe wave reflected from an interface between silica and elemental α-gallium reveal its very strong optical nonlinearity, affecting both these parameters of the reflected wave. The data corroborate with a nonthermal mechanism of optical response which assumes appearance of a homogeneous highly metallic layer, only a few nanometer thick, between the silica and bulk α-gallium.

  • Received 9 April 2001

DOI:https://doi.org/10.1103/PhysRevB.64.193312

©2001 American Physical Society

Authors & Affiliations

P. Petropoulos, H. S. Kim, and D. J. Richardson

  • Optoelectronics Research Centre, University of Southampton, Highfield, SO17 1BJ, United Kingdom

V. A. Fedotov and N. I. Zheludev

  • Department of Physics and Astronomy, University of Southampton, Highfield, SO17 1BJ, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 64, Iss. 19 — 15 November 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×