Electronic structure of epitaxial thin NiO(100) films grown on Ag(100): Towards a firm experimental basis

M. Portalupi, L. Duò, G. Isella, R. Bertacco, M. Marcon, and F. Ciccacci
Phys. Rev. B 64, 165402 – Published 28 September 2001
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Abstract

Valence- and conduction-band states of NiO(100) thin films grown onto Ag(100) have been probed by photoemission (PE) and inverse photoemission (IPE) spectroscopy, respectively. In particular, emphasis is given to the empty states, for which contrasting data are reported on samples obtained by different procedures. The good quality of the investigated NiO sample surface has allowed us to deduce a reliable picture of the empty state spectral function. Exploiting k resolution it was possible to disentangle the various orbital contributions and clearly fix their energy position, including that of the so-called ligand hole excitation. A combined PE and IPE analysis points towards the nearly intrinsic nature of the investigated NiO.

  • Received 13 April 2001

DOI:https://doi.org/10.1103/PhysRevB.64.165402

©2001 American Physical Society

Authors & Affiliations

M. Portalupi, L. Duò, G. Isella, R. Bertacco, M. Marcon, and F. Ciccacci

  • INFM-Dipartimento di Fisica, Politecnico di Milano, piazza L. Da Vinci 32, 20133 Milano, Italy

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Issue

Vol. 64, Iss. 16 — 15 October 2001

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